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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(ELSEVIER SCIENCE BV, 2007)
The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...
The effect of intrinsic defects on the hole transport in Cu2O
(NATL INST OPTOELECTRONICS, 2009)
Structural and electrical properties of Cu2O bulk samples are characterized by X-Ray diffraction (XRD) and Hall effect measurements. The variation of the carrier concentration with temperature is explained in terms of the ...
Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy
(POLISH ACAD SCIENCES INST PHYSICS, 2008)
We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the ...
The substrate temperature dependent electrical properties of titanium dioxide thin films
(SPRINGER, 2010)
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ...
The thickness effect on the electrical conduction mechanism in titanium oxide thin films
(ELSEVIER SCIENCE SA, 2010)
In this paper we made a study on the effect of films thickness on the electrical conduction properties of nanostructured TiO(2) thin films deposited by d.c. reactive sputtering. The deposition was performed on heated (573 ...
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers
(ELSEVIER SCIENCE BV, 2010)
The low-temperature conductivity of InxGa1-xN alloys (0.06 <= x <= 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, ...
Extraction of important electrical parameters of CuO
(ELSEVIER SCIENCE BV, 2011)
Conductivity, X-ray diffraction (XRD), optical absorption and atomic force microscopy (AFM) measurements of CuO thin film were presented. Three distinct electrical conduction contributions with discrete characteristic ...
Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film
(ELSEVIER SCIENCE BV, 2009)
Transport properties of Nb-doped titanium oxide (TiO2) thin film, obtained by a RF sputtering technique, have been investigated by means of the electrical conductivity and the Seebeck coefficient as a function of temperature ...
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
(AMER INST PHYSICS, 2009)
This work describes Shubnikov-de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a ...
Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
(WILEY-BLACKWELL, 2010)
Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In0.12N/AlN/GaN/AlN heterostructurcs grown by Metal Organic Chemical Vapor Deposition ...
