Yazar "Bayrakli, O." için listeleme
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Analysis of current conduction mechanism in CZTSSe/n-Si structure
Terlemezoglu, M.; Bayrakli, O.; Gullu, H. H.; Colakoglu, T.; Yildiz, D. E.; Parlak, M. (SPRINGER, 2018)In this study, Cu2ZnSn(S,Se)(4) (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
Bayrakli, O.; Terlemezoglu, M.; Gullu, H. H.; Parlak, M. (ELSEVIER SCIENCE SA, 2017)Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another ... -
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M. (CANADIAN SCIENCE PUBLISHING, NRC RESEARCH PRESS, 2018)In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred ... -
Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation
Bayrakli, O.; Terlemezoglu, M.; Gullu, H. H.; Parlak, M. (IOP PUBLISHING LTD, 2017)Cu2ZnSnSe4 (CZTSe) thin films were deposited onto soda lime glass substrates by thermal evaporation using the pure elemental sources. The influence of the sequential deposition order of Zn and Sn precursor layers for ... -
INVESTIGATION ON DEVICE CHARACTERISTICS OF n-CdS/p-Ag(Ga-In)Te-2 HETEROJUNCTION DIODE
Bayrakli, O.; Gullu, H. H.; Parlak, M. (WORLD SCIENTIFIC PUBL CO PTE LTD, 2018)This work indicates the device properties of polycrystalline p-AgGaInTe2 (AGIT) thin films deposited on bare and ITO-coated glass substrates with thermal evaporation technique. Device characteristics of n-CdS/p-AGIT ... -
Optical and electrical characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films
Gullu, H. H.; Bayrakli, O.; Parlak, M. (ELSEVIER SCIENCE SA, 2017)In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline thin films were investigated. They were deposited on soda lime glass substrates with the evaporation of pure elemental ... -
Study on the electrical properties of ZnSe/Si heterojunction diode
Gullu, H. H.; Bayrakli, O.; Yildiz, D. E.; Parlak, M. (SPRINGER, 2017)ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ... -
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yigiterol, F.; Gullu, H. H.; Bayrakli, O.; Yildiz, D. E. (SPRINGER, 2018)Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160-400 K using current-voltage (I-V), capacitance-voltage (C-V) and ...
