Yazar "Parlak, M." için listeleme
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Analysis of current conduction mechanism in CZTSSe/n-Si structure
Terlemezoglu, M.; Bayrakli, O.; Gullu, H. H.; Colakoglu, T.; Yildiz, D. E.; Parlak, M. (SPRINGER, 2018)In this study, Cu2ZnSn(S,Se)(4) (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Construction of self-assembled vertical nanoflakes on CZTSSe thin films
Terlemezoglu, M.; Surucu, O. Bayrakli; Colakoglu, T.; Abak, M. K.; Gullu, H. H.; Ercelebi, C.; Parlak, M. (IOP PUBLISHING LTD, 2019)Cu2ZnSn(S, Se)(4) (CZTSSe) is a promising alternative absorber material to achieve high power conversion efficiencies, besides its property of involving low-cost and earth-abundant elements when compared to Cu(In, Ga) Se-2 ... -
CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications
Terlemezoglu, M.; Surucu, O. Bayrakli; Dogru, C.; Gullu, H. H.; Ciftpinar, E. H.; Ercelebi, C.; Parlak, M. (SPRINGER, 2019)The focus of this study is the characterization of Cu2ZnSn(S,Se)(4) (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au ... -
Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
Bayrakli, O.; Terlemezoglu, M.; Gullu, H. H.; Parlak, M. (ELSEVIER SCIENCE SA, 2017)Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another ... -
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Surucu, O. Bayrakli; Gullu, H. H.; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (ELSEVIER, 2019)In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ... -
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (SPRINGER, 2019)In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements ... -
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M. (CANADIAN SCIENCE PUBLISHING, NRC RESEARCH PRESS, 2018)In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred ... -
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (SPRINGER, 2019)In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide ... -
Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation
Bayrakli, O.; Terlemezoglu, M.; Gullu, H. H.; Parlak, M. (IOP PUBLISHING LTD, 2017)Cu2ZnSnSe4 (CZTSe) thin films were deposited onto soda lime glass substrates by thermal evaporation using the pure elemental sources. The influence of the sequential deposition order of Zn and Sn precursor layers for ... -
INVESTIGATION ON DEVICE CHARACTERISTICS OF n-CdS/p-Ag(Ga-In)Te-2 HETEROJUNCTION DIODE
Bayrakli, O.; Gullu, H. H.; Parlak, M. (WORLD SCIENTIFIC PUBL CO PTE LTD, 2018)This work indicates the device properties of polycrystalline p-AgGaInTe2 (AGIT) thin films deposited on bare and ITO-coated glass substrates with thermal evaporation technique. Device characteristics of n-CdS/p-AGIT ... -
Optical and electrical characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films
Gullu, H. H.; Bayrakli, O.; Parlak, M. (ELSEVIER SCIENCE SA, 2017)In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline thin films were investigated. They were deposited on soda lime glass substrates with the evaporation of pure elemental ... -
Study on the electrical properties of ZnSe/Si heterojunction diode
Gullu, H. H.; Bayrakli, O.; Yildiz, D. E.; Parlak, M. (SPRINGER, 2017)ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ... -
Temperature dependence of band gaps in sputtered SnSe thin films
Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M. (PERGAMON-ELSEVIER SCIENCE LTD, 2019)Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission ... -
Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes
Gullu, H. H.; Yildiz, D. E.; Surucu, O. Bayrakli; Terlemezoglu, M.; Parlak, M. (INDIAN ACAD SCIENCES, 2019)Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The ...
