Browsing by Author "Acar, S."
Now showing items 1-5 of 5
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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
Lisesivdin, S. B.; Yildiz, A.; Acar, S.; Kasap, M.; Oezcelik, S.; Oezbay, E. (ELSEVIER SCIENCE BV, 2007)The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ... -
Electron transport in Ga-rich InxGa1-xN alloys
Yildiz, A.; Lisesivdin, S. B.; Acar, S.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ... -
Physical activity in women with subclinical hypothyroidism
Tanriverdi, A.; Kahraman, B. Ozcan; Ozsoy, I.; Bayraktar, F.; Saydam, B. Ozgen; Acar, S.; Ozpelit, E. (SPRINGER, 2019)PurposePhysical activity is associated with many health-related benefits. However, there is a shift towards inactive lifestyles around the world. Subclinical hypothyroidism (SCH) may have adverse effects similar to ... -
Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy
Yildiz, A.; Dagdelen, F.; Acar, S.; Lisesivdin, S. B.; Kasap, M.; Aydogdu, Y.; Bosi, M. (POLISH ACAD SCIENCES INST PHYSICS, 2008)We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the ... -
Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE
Acar, S.; Yildiz, A.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350 K. The experimental results are analysed using a two-band ...