Browsing by Author "Lisesivdin, S. B."
Now showing items 1-19 of 19
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Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Bosi, M. (PERGAMON-ELSEVIER SCIENCE LTD, 2009)Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ... -
Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN
Tasli, P.; Yildiz, A.; Kasap, M.; Ozbay, E.; Lisesivdin, S. B.; Ozcelik, S. (TAYLOR & FRANCIS LTD, 2010)Low temperature electrical measurements of conductivity, the Hall effect and magnetoconductance were performed on a degenerate AlGaN sample. The sample exhibited negative magnetoconductance at low magnetic fields and low ... -
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers
Yildiz, A.; Lisesivdin, S. B.; Tasli, P.; Ozbay, E.; Kasap, M. (ELSEVIER SCIENCE BV, 2010)The low-temperature conductivity of InxGa1-xN alloys (0.06 <= x <= 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, ... -
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ... -
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
Lisesivdin, S. B.; Yildiz, A.; Acar, S.; Kasap, M.; Oezcelik, S.; Oezbay, E. (ELSEVIER SCIENCE BV, 2007)The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ... -
Electrical conduction properties of Si delta-doped GaAs grown by MBE
Yildiz, A.; Lisesivdin, S. B.; Altuntas, H.; Kasap, M.; Ozcelik, S. (ELSEVIER SCIENCE BV, 2009)The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ... -
Electrical properties of TiO(2) thin films
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (ELSEVIER SCIENCE BV, 2008)The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the ... -
Electron transport in Ga-rich InxGa1-xN alloys
Yildiz, A.; Lisesivdin, S. B.; Acar, S.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ... -
Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition
Yildiz, A.; Tasli, P.; Sarikavak, B.; Lisesivdin, S. B.; Ozturk, M. K.; Kasap, M.; Ozcelik, S. (MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011)Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity ... -
Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements
Lisesivdin, S. B.; Demirezen, S.; Caliskan, M. D.; Yildiz, A.; Kasap, M.; Ozcelik, S.; Ozbay, E. (IOP PUBLISHING LTD, 2008)Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ... -
High temperature variable-range hopping conductivity in undoped TiO2 thin film
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (NATL INST OPTOELECTRONICS, 2007)Electrical conductivity measurements in an undoped titanium dioxide thin film have been carried out as a function of temperature (180-320 K). The film has been deposited onto glass substrates by a d.c. magnetron-sputtering ... -
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Ozcelik, S.; Ozbay, E.; Balkan, N. (SPRINGER HEIDELBERG, 2010)The electrical conduction mechanisms in various highly resistive GaN layers of Al (x) Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ... -
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
Lisesivdin, S. B.; Balkan, N.; Makarovsky, O.; Patane, A.; Yildiz, A.; Caliskan, M. D.; Kasap, M. (AMER INST PHYSICS, 2009)This work describes Shubnikov-de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a ... -
Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (ELSEVIER SCIENCE BV, 2009)Transport properties of Nb-doped titanium oxide (TiO2) thin film, obtained by a RF sputtering technique, have been investigated by means of the electrical conductivity and the Seebeck coefficient as a function of temperature ... -
Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors
Lisesivdin, S. B.; Yildiz, A.; Kasap, M. (NATL INST OPTOELECTRONICS, 2007)The investigating of the GaN-based high electron mobility transistors (HEMTs) is focused to achieve two goals: increase of carrier density and mobility. Increasing the number of the carriers in the 2-dimensional-electron-gas ... -
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
Lisesivdin, S. B.; Yildiz, A.; Balkan, N.; Kasap, M.; Ozcelik, S.; Ozbay, E. (AMER INST PHYSICS, 2010)We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al(0.22)Ga(0.78)N/GaN heterostructures with AlN interlayer grown by metal-organic ... -
Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy
Yildiz, A.; Dagdelen, F.; Acar, S.; Lisesivdin, S. B.; Kasap, M.; Aydogdu, Y.; Bosi, M. (POLISH ACAD SCIENCES INST PHYSICS, 2008)We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the ... -
The substrate temperature dependent electrical properties of titanium dioxide thin films
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, Diana (SPRINGER, 2010)Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ... -
Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
Tasli, P.; Lisesivdin, S. B.; Yildiz, A.; Kasap, M.; Arslan, E.; Ozcelik, S.; Ozbay, E. (WILEY-BLACKWELL, 2010)Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In0.12N/AlN/GaN/AlN heterostructurcs grown by Metal Organic Chemical Vapor Deposition ...
