Browsing by Author "Ozcelik, S."
Now showing items 1-10 of 10
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Comparing of the host-guest interaction in the Hofmann-1,10-diaminodecane and Hofmann-1,12-diaminododecane-type clathrates
Saglam, S.; Sertbakan, T. R.; Ozbay, A.; Ozcelik, S.; Kasap, E. (SPRINGER, 2010)M(1,12-diaminododecane)Ni(CN)4.G (M = Co, Ni or Cd; G = chlorobenzene; 1,2-; 1,3- or 1,4- dichlorobenzene) clathrates were prepared in powder form for the first time and their infrared spectra were reported and then compared ... -
Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN
Tasli, P.; Yildiz, A.; Kasap, M.; Ozbay, E.; Lisesivdin, S. B.; Ozcelik, S. (TAYLOR & FRANCIS LTD, 2010)Low temperature electrical measurements of conductivity, the Hall effect and magnetoconductance were performed on a degenerate AlGaN sample. The sample exhibited negative magnetoconductance at low magnetic fields and low ... -
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ... -
Electrical conduction properties of Si delta-doped GaAs grown by MBE
Yildiz, A.; Lisesivdin, S. B.; Altuntas, H.; Kasap, M.; Ozcelik, S. (ELSEVIER SCIENCE BV, 2009)The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ... -
Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition
Yildiz, A.; Tasli, P.; Sarikavak, B.; Lisesivdin, S. B.; Ozturk, M. K.; Kasap, M.; Ozcelik, S. (MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011)Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity ... -
Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements
Lisesivdin, S. B.; Demirezen, S.; Caliskan, M. D.; Yildiz, A.; Kasap, M.; Ozcelik, S.; Ozbay, E. (IOP PUBLISHING LTD, 2008)Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ... -
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Ozcelik, S.; Ozbay, E.; Balkan, N. (SPRINGER HEIDELBERG, 2010)The electrical conduction mechanisms in various highly resistive GaN layers of Al (x) Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ... -
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
Lisesivdin, S. B.; Yildiz, A.; Balkan, N.; Kasap, M.; Ozcelik, S.; Ozbay, E. (AMER INST PHYSICS, 2010)We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al(0.22)Ga(0.78)N/GaN heterostructures with AlN interlayer grown by metal-organic ... -
Structural, electrical and optical characterization of InGaN layers grown by MOVPE
Yildiz, A.; Kemal, Oeztuerk M.; Bosi, M.; Ozcelik, S.; Kasap, M. (IOP PUBLISHING LTD, 2009)We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on ... -
Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
Tasli, P.; Lisesivdin, S. B.; Yildiz, A.; Kasap, M.; Arslan, E.; Ozcelik, S.; Ozbay, E. (WILEY-BLACKWELL, 2010)Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In0.12N/AlN/GaN/AlN heterostructurcs grown by Metal Organic Chemical Vapor Deposition ...
