Browsing by Author "Yildiz, A."
Now showing items 1-20 of 36
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Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Bosi, M. (PERGAMON-ELSEVIER SCIENCE LTD, 2009)Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ... -
The change in the electrical transport mechanism from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO2
Yildiz, A.; Alsac, A. A.; Serin, T.; Serin, N. (SPRINGER, 2011)The electrical conductivity measurements on SnO2 over a wide range of temperatures were performed. The results provided experimental evidence for a transition from the grain boundary (GB) conduction at high temperatures ... -
Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN
Tasli, P.; Yildiz, A.; Kasap, M.; Ozbay, E.; Lisesivdin, S. B.; Ozcelik, S. (TAYLOR & FRANCIS LTD, 2010)Low temperature electrical measurements of conductivity, the Hall effect and magnetoconductance were performed on a degenerate AlGaN sample. The sample exhibited negative magnetoconductance at low magnetic fields and low ... -
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers
Yildiz, A.; Lisesivdin, S. B.; Tasli, P.; Ozbay, E.; Kasap, M. (ELSEVIER SCIENCE BV, 2010)The low-temperature conductivity of InxGa1-xN alloys (0.06 <= x <= 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, ... -
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ... -
Effect of formaldehyde gas adsorption on the electrical conductivity of Pd-doped TiO2 thin films
Yildiz, A.; Crisan, D.; Dragan, N.; Iftimie, N.; Florea, D.; Mardare, D. (SPRINGER, 2011)0.5 wt% Pd-doped titanium oxide thin films were obtained by dip-coating on silicon substrates. The films were compacted by annealing in air at 300 and 500 A degrees C. Temperature dependent electrical conductivity measurements ... -
Effect of gamma irradiation on the shallow defect states of hydrogenated amorphous silicon films
Yildiz, A.; Serin, N.; Serin, T. (EDP SCIENCES S A, 2011)The temperature dependence of the electrical conductivity before and after gamma irradiation of hydrogenated amorphous silicon (a-Si:H) films, prepared by the hot wire method, at a dose of 2 kGy of (60)Co gamma irradiation ... -
The effect of intrinsic defects on the hole transport in Cu2O
Yildiz, A.; Serin, N.; Serin, T.; Kasap, M. (NATL INST OPTOELECTRONICS, 2009)Structural and electrical properties of Cu2O bulk samples are characterized by X-Ray diffraction (XRD) and Hall effect measurements. The variation of the carrier concentration with temperature is explained in terms of the ... -
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
Lisesivdin, S. B.; Yildiz, A.; Acar, S.; Kasap, M.; Oezcelik, S.; Oezbay, E. (ELSEVIER SCIENCE BV, 2007)The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ... -
Electrical conduction mechanism and gas sensing properties of Pd-doped TiO2 films
Mardare, Diana; Iftimie, Nicoleta; Crisan, Maria; Raileanu, Malina; Yildiz, A.; Coman, T.; Pomoni, K. (ELSEVIER SCIENCE BV, 2011)Undoped and Pd-doped titanium oxide thin films (0.5 wt.%) were prepared by the sol-gel technique (dip-coating) on glass and silicon substrates. The as-deposited thin films were compacted by subjecting them to different ... -
Electrical conduction properties of Co-doped ZnO nanocrystalline thin films
Yildiz, A.; Yurduguzel, B.; Kayhan, B.; Calin, G.; Dobromir, M.; Iacomi, F. (SPRINGER, 2012)The temperature dependent conductivity behavior of 15% Co and 25% Co-doped ZnO nanocrystalline thin films prepared by spin-coating method was examined. It was found that the conductivity shows a change when the Co concentration ... -
Electrical conduction properties of In-doped ZnO thin films
Serin, T.; Yildiz, A.; Uzun, S.; Cam, E.; Serin, N. (IOP PUBLISHING LTD, 2011)The electrical conduction mechanism of undoped and In-doped ZnO thin films is investigated. The behavior of conductivity is consistent with the variable-range hopping conduction mechanism. From the experimental data, the ... -
Electrical conduction properties of Si delta-doped GaAs grown by MBE
Yildiz, A.; Lisesivdin, S. B.; Altuntas, H.; Kasap, M.; Ozcelik, S. (ELSEVIER SCIENCE BV, 2009)The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ... -
Electrical properties of TiO(2) thin films
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (ELSEVIER SCIENCE BV, 2008)The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the ... -
Electron transport in Ga-rich InxGa1-xN alloys
Yildiz, A.; Lisesivdin, S. B.; Acar, S.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ... -
Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films
Serin, N.; Yildiz, A.; Alsac, A. A.; Serin, T. (ELSEVIER SCIENCE SA, 2011)The electrical properties of undoped SnO2 thin films prepared by the sol-gel technique were investigated by conductivity measurements in a temperature range of 50-200 K. Structural characterizations of the films were ... -
Extraction of important electrical parameters of CuO
Serin, T.; Yildiz, A.; Sahin, S. Horzum; Serin, N. (ELSEVIER SCIENCE BV, 2011)Conductivity, X-ray diffraction (XRD), optical absorption and atomic force microscopy (AFM) measurements of CuO thin film were presented. Three distinct electrical conduction contributions with discrete characteristic ... -
Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition
Yildiz, A.; Tasli, P.; Sarikavak, B.; Lisesivdin, S. B.; Ozturk, M. K.; Kasap, M.; Ozcelik, S. (MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011)Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity ... -
Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements
Lisesivdin, S. B.; Demirezen, S.; Caliskan, M. D.; Yildiz, A.; Kasap, M.; Ozcelik, S.; Ozbay, E. (IOP PUBLISHING LTD, 2008)Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ... -
High temperature variable-range hopping conductivity in undoped TiO2 thin film
Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (NATL INST OPTOELECTRONICS, 2007)Electrical conductivity measurements in an undoped titanium dioxide thin film have been carried out as a function of temperature (180-320 K). The film has been deposited onto glass substrates by a d.c. magnetron-sputtering ...
