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DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)

Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ...

Electrical conduction properties of Si delta-doped GaAs grown by MBE

Yildiz, A.; Lisesivdin, S. B.; Altuntas, H.; Kasap, M.; Ozcelik, S. (ELSEVIER SCIENCE BV, 2009)

The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ...