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DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ...
Electrical conduction properties of Si delta-doped GaAs grown by MBE
(ELSEVIER SCIENCE BV, 2009)
The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ...
Structural, electrical and optical characterization of InGaN layers grown by MOVPE
(IOP PUBLISHING LTD, 2009)
We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on ...
Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements
(IOP PUBLISHING LTD, 2008)
Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ...