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Electrical properties of TiO(2) thin films

Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (ELSEVIER SCIENCE BV, 2008)

The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the ...

Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Bosi, M. (PERGAMON-ELSEVIER SCIENCE LTD, 2009)

Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ...

Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

Lisesivdin, S. B.; Balkan, N.; Makarovsky, O.; Patane, A.; Yildiz, A.; Caliskan, M. D.; Kasap, M. (AMER INST PHYSICS, 2009)

This work describes Shubnikov-de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a ...

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)

Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ...

Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film

Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (ELSEVIER SCIENCE BV, 2009)

Transport properties of Nb-doped titanium oxide (TiO2) thin film, obtained by a RF sputtering technique, have been investigated by means of the electrical conductivity and the Seebeck coefficient as a function of temperature ...

Electrical conduction properties of Si delta-doped GaAs grown by MBE

Yildiz, A.; Lisesivdin, S. B.; Altuntas, H.; Kasap, M.; Ozcelik, S. (ELSEVIER SCIENCE BV, 2009)

The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ...

The effect of intrinsic defects on the hole transport in Cu2O

Yildiz, A.; Serin, N.; Serin, T.; Kasap, M. (NATL INST OPTOELECTRONICS, 2009)

Structural and electrical properties of Cu2O bulk samples are characterized by X-Ray diffraction (XRD) and Hall effect measurements. The variation of the carrier concentration with temperature is explained in terms of the ...

Structural, electrical and optical characterization of InGaN layers grown by MOVPE

Yildiz, A.; Kemal, Oeztuerk M.; Bosi, M.; Ozcelik, S.; Kasap, M. (IOP PUBLISHING LTD, 2009)

We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on ...

Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements

Lisesivdin, S. B.; Demirezen, S.; Caliskan, M. D.; Yildiz, A.; Kasap, M.; Ozcelik, S.; Ozbay, E. (IOP PUBLISHING LTD, 2008)

Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ...

The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

Lisesivdin, S. B.; Yildiz, A.; Acar, S.; Kasap, M.; Oezcelik, S.; Oezbay, E. (ELSEVIER SCIENCE BV, 2007)

The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...