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Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements

Lisesivdin, S. B.; Demirezen, S.; Caliskan, M. D.; Yildiz, A.; Kasap, M.; Ozcelik, S.; Ozbay, E. (IOP PUBLISHING LTD, 2008)

Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ...