Search
Now showing items 1-2 of 2
The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/omega-V measurements
(ELSEVIER SCIENCE BV, 2008)
The forward and reverse bias capacitance-voltage (C V) and conductance-voltage (G/w-V) characteristics of Al-TiW-Pd2Si/n-Si structures have been investigated over a wide frequency range of 5 kHz-5 MHz. These measurements ...
Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures
(ELSEVIER SCIENCE BV, 2008)
Different from conventional metal-Si compounds-n-Si structures, the thin film of TiW alloy was deposited on Pd2Si-n-Si to form a diffusion barrier between aluminum (All and Pd2Si-n-Si. Dielectric properties and electrical ...