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The effect of intrinsic defects on the hole transport in Cu2O

Yildiz, A.; Serin, N.; Serin, T.; Kasap, M. (NATL INST OPTOELECTRONICS, 2009)

Structural and electrical properties of Cu2O bulk samples are characterized by X-Ray diffraction (XRD) and Hall effect measurements. The variation of the carrier concentration with temperature is explained in terms of the ...