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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

Lisesivdin, S. B.; Yildiz, A.; Acar, S.; Kasap, M.; Oezcelik, S.; Oezbay, E. (ELSEVIER SCIENCE BV, 2007)

The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)

Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ...