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Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy
(POLISH ACAD SCIENCES INST PHYSICS, 2008)
We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the ...