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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(ELSEVIER SCIENCE BV, 2007)
The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...