Search
Now showing items 1-3 of 3
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(ELSEVIER SCIENCE BV, 2007)
The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...
Electron transport in Ga-rich InxGa1-xN alloys
(IOP PUBLISHING LTD, 2007)
Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ...
Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE
(IOP PUBLISHING LTD, 2007)
Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350 K. The experimental results are analysed using a two-band ...