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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

Lisesivdin, S. B.; Yildiz, A.; Acar, S.; Kasap, M.; Oezcelik, S.; Oezbay, E. (ELSEVIER SCIENCE BV, 2007)

The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...

Electron transport in Ga-rich InxGa1-xN alloys

Yildiz, A.; Lisesivdin, S. B.; Acar, S.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ...

Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

Lisesivdin, S. B.; Yildiz, A.; Kasap, M. (NATL INST OPTOELECTRONICS, 2007)

The investigating of the GaN-based high electron mobility transistors (HEMTs) is focused to achieve two goals: increase of carrier density and mobility. Increasing the number of the carriers in the 2-dimensional-electron-gas ...

High temperature variable-range hopping conductivity in undoped TiO2 thin film

Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Mardare, D. (NATL INST OPTOELECTRONICS, 2007)

Electrical conductivity measurements in an undoped titanium dioxide thin film have been carried out as a function of temperature (180-320 K). The film has been deposited onto glass substrates by a d.c. magnetron-sputtering ...