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Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy

Yildiz, A.; Dagdelen, F.; Acar, S.; Lisesivdin, S. B.; Kasap, M.; Aydogdu, Y.; Bosi, M. (POLISH ACAD SCIENCES INST PHYSICS, 2008)

We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the ...

Electron transport in Ga-rich InxGa1-xN alloys

Yildiz, A.; Lisesivdin, S. B.; Acar, S.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ...

Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE

Acar, S.; Yildiz, A.; Kasap, M.; Bosi, M. (IOP PUBLISHING LTD, 2007)

Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350 K. The experimental results are analysed using a two-band ...

Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Bosi, M. (PERGAMON-ELSEVIER SCIENCE LTD, 2009)

Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ...