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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(ELSEVIER SCIENCE BV, 2007)
The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350K. ...
Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy
(POLISH ACAD SCIENCES INST PHYSICS, 2008)
We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the ...
Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film
(ELSEVIER SCIENCE BV, 2009)
Transport properties of Nb-doped titanium oxide (TiO2) thin film, obtained by a RF sputtering technique, have been investigated by means of the electrical conductivity and the Seebeck coefficient as a function of temperature ...
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
(AMER INST PHYSICS, 2009)
This work describes Shubnikov-de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a ...
Electron transport in Ga-rich InxGa1-xN alloys
(IOP PUBLISHING LTD, 2007)
Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). ...
Electrical conduction properties of Si delta-doped GaAs grown by MBE
(ELSEVIER SCIENCE BV, 2009)
The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum ...
Electrical properties of TiO(2) thin films
(ELSEVIER SCIENCE BV, 2008)
The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the ...
Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors
(NATL INST OPTOELECTRONICS, 2007)
The investigating of the GaN-based high electron mobility transistors (HEMTs) is focused to achieve two goals: increase of carrier density and mobility. Increasing the number of the carriers in the 2-dimensional-electron-gas ...
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ...
Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
(PERGAMON-ELSEVIER SCIENCE LTD, 2009)
Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ...
