Search
Now showing items 11-15 of 15
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al(x)Ga(1-x)As/GaAs heterostructures that were grown ...
Structural, electrical and optical characterization of InGaN layers grown by MOVPE
(IOP PUBLISHING LTD, 2009)
We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on ...
Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
(PERGAMON-ELSEVIER SCIENCE LTD, 2009)
Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ...
High temperature variable-range hopping conductivity in undoped TiO2 thin film
(NATL INST OPTOELECTRONICS, 2007)
Electrical conductivity measurements in an undoped titanium dioxide thin film have been carried out as a function of temperature (180-320 K). The film has been deposited onto glass substrates by a d.c. magnetron-sputtering ...
Growth parameter investigation of Al(0.25)Ga(0.75)N/GaN/AlN heterostructures with Hall effect measurements
(IOP PUBLISHING LTD, 2008)
Hall effect measurements on unintentionally doped Al(0.25)Ga(0.75)N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20-300 K) and magnetic ...
