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The effect of intrinsic defects on the hole transport in Cu2O
(NATL INST OPTOELECTRONICS, 2009)
Structural and electrical properties of Cu2O bulk samples are characterized by X-Ray diffraction (XRD) and Hall effect measurements. The variation of the carrier concentration with temperature is explained in terms of the ...
Extraction of important electrical parameters of CuO
(ELSEVIER SCIENCE BV, 2011)
Conductivity, X-ray diffraction (XRD), optical absorption and atomic force microscopy (AFM) measurements of CuO thin film were presented. Three distinct electrical conduction contributions with discrete characteristic ...
Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films
(ELSEVIER SCIENCE SA, 2011)
The electrical properties of undoped SnO2 thin films prepared by the sol-gel technique were investigated by conductivity measurements in a temperature range of 50-200 K. Structural characterizations of the films were ...
