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Electrical conduction properties of Co-doped ZnO nanocrystalline thin films
(SPRINGER, 2012)
The temperature dependent conductivity behavior of 15% Co and 25% Co-doped ZnO nanocrystalline thin films prepared by spin-coating method was examined. It was found that the conductivity shows a change when the Co concentration ...
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
(AMER INST PHYSICS, 2010)
We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al(0.22)Ga(0.78)N/GaN heterostructures with AlN interlayer grown by metal-organic ...
Electrical properties of TiO(2) thin films
(ELSEVIER SCIENCE BV, 2008)
The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the ...
The thickness effect on the electrical conduction mechanism in titanium oxide thin films
(ELSEVIER SCIENCE SA, 2010)
In this paper we made a study on the effect of films thickness on the electrical conduction properties of nanostructured TiO(2) thin films deposited by d.c. reactive sputtering. The deposition was performed on heated (573 ...
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
(SPRINGER HEIDELBERG, 2010)
The electrical conduction mechanisms in various highly resistive GaN layers of Al (x) Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ...
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
(AMER INST PHYSICS, 2010)
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metal-insulator ...
Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
(PERGAMON-ELSEVIER SCIENCE LTD, 2009)
Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is ...
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers
(ELSEVIER SCIENCE BV, 2010)
The low-temperature conductivity of InxGa1-xN alloys (0.06 <= x <= 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, ...
The substrate temperature dependent electrical properties of titanium dioxide thin films
(SPRINGER, 2010)
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ...
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
(AMER INST PHYSICS, 2009)
This work describes Shubnikov-de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a ...