Güncel Gönderiler: Kimya ve Kimyasal İşleme Teknolojileri
Toplam kayıt 23, listelenen: 21-23
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A Study on the Electronic Properties of SiOxNy/p-Si Interface
(SPRINGER, 2018)In this study, we investigated the electrical properties of Sn/SiOxNy/p-Si metal-insulator layer-semiconductor (MIS) structure. Silicon oxynitride (SiOxNy) thin film was grown on chemically cleaned p-Si substrate by the ... -
Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device
(SPRINGER, 2019)The electrical properties of Au/PEDOT:WO3/p-Si hybrid devices were studied in terms of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Poly (3,4-ethylene dioxythiophene/tungsten trioxide (PEDOT:WO3) ... -
Fabrication And Characterizatıon Of Au/Carmine/N-Gaas Schottky Diode By Spin Coating Technique
(VIRTUAL INST PHYSICS, 2019)Carmine thin films were obtained on both quartz glass and n-GaAs semiconductor using spin coating. Scanning electron microscopy (SEM) shows that the thin film has a uniform surface and the average grain size is 30.717 nm. ...
