| dc.contributor.author | Yildiz, A. | |
| dc.contributor.author | Tasli, P. | |
| dc.contributor.author | Sarikavak, B. | |
| dc.contributor.author | Lisesivdin, S. B. | |
| dc.contributor.author | Ozturk, M. K. | |
| dc.contributor.author | Kasap, M. | |
| dc.contributor.author | Ozcelik, S. | |
| dc.date.accessioned | 2019-11-24T20:37:27Z | |
| dc.date.available | 2019-11-24T20:37:27Z | |
| dc.date.issued | 2011 | |
| dc.identifier.issn | 1063-7826 | |
| dc.identifier.issn | 1090-6479 | |
| dc.identifier.uri | https://dx.doi.org/10.1134/S1063782611010234 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12513/2362 | |
| dc.description | WOS: 000289572100004 | en_US |
| dc.description.abstract | Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted. | en_US |
| dc.description.sponsorship | State of Planning Organization of TurkeyTurkiye Cumhuriyeti Kalkinma Bakanligi [2001K120590]; European UnionEuropean Union (EU); TUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [N 106E198, 107A004, 107A012]; Turkish Academy of SciencesTurkish Academy of Sciences | en_US |
| dc.description.sponsorship | This work is supported by the State of Planning Organization of Turkey under Grant no. 2001K120590 and European Union under the projects EU-PHOME, and EU-ECONAM, and TUBITAK under Projects N 106E198, 107A004, and 107A012. One of the authors (E. Ozbay) also acknowledges partial support from the Turkish Academy of Sciences. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | MAIK NAUKA/INTERPERIODICA/SPRINGER | en_US |
| dc.relation.isversionof | 10.1134/S1063782611010234 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition | en_US |
| dc.type | article | en_US |
| dc.relation.journal | SEMICONDUCTORS | en_US |
| dc.contributor.department | Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü | en_US |
| dc.identifier.volume | 45 | en_US |
| dc.identifier.issue | 1 | en_US |
| dc.identifier.startpage | 33 | en_US |
| dc.identifier.endpage | 36 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
