| dc.contributor.author | Yildiz, A. | |
| dc.contributor.author | Lisesivdin, S. B. | |
| dc.contributor.author | Tasli, P. | |
| dc.contributor.author | Ozbay, E. | |
| dc.contributor.author | Kasap, M. | |
| dc.date.accessioned | 2019-11-24T20:37:35Z | |
| dc.date.available | 2019-11-24T20:37:35Z | |
| dc.date.issued | 2010 | |
| dc.identifier.issn | 1567-1739 | |
| dc.identifier.issn | 1878-1675 | |
| dc.identifier.uri | https://dx.doi.org/10.1016/j.cap.2009.10.004 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12513/2383 | |
| dc.description | WOS: 000273437900024 | en_US |
| dc.description.abstract | The low-temperature conductivity of InxGa1-xN alloys (0.06 <= x <= 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1-xN alloys. In addition, all of the InxGa1-xN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as x(c) = 0.0543 for InxGa1-xN alloys. (c) 2009 Elsevier B.V. All rights reserved. | en_US |
| dc.description.sponsorship | State Planning Organization of TurkeyTurkiye Cumhuriyeti Kalkinma Bakanligi [2001K120590]; TUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [104E090, 105E066, 105A005]; Turkish Academy of SciencesTurkish Academy of Sciences | en_US |
| dc.description.sponsorship | We would like to thank Dr. Mateo Bosi for providing the In<INF>x</INF>Ga<INF>1-x</INF>N samples. This work is supported by the State Planning Organization of Turkey under Grant No. 2001K120590 and by TUBITAK under the project nos. 104E090, 105E066, and 105A005. One of the authors ( Ekmel Ozbay) acknowledges partial support from the Turkish Academy of Sciences. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | ELSEVIER SCIENCE BV | en_US |
| dc.relation.isversionof | 10.1016/j.cap.2009.10.004 | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Electronic transport | en_US |
| dc.subject | InGaN | en_US |
| dc.subject | MIT | en_US |
| dc.title | Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers | en_US |
| dc.type | article | en_US |
| dc.relation.journal | CURRENT APPLIED PHYSICS | en_US |
| dc.contributor.department | Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü | en_US |
| dc.identifier.volume | 10 | en_US |
| dc.identifier.issue | 3 | en_US |
| dc.identifier.startpage | 838 | en_US |
| dc.identifier.endpage | 841 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
