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dc.contributor.authorYildiz, A.
dc.contributor.authorKasap, M.
dc.date.accessioned2019-11-24T20:37:38Z
dc.date.available2019-11-24T20:37:38Z
dc.date.issued2010
dc.identifier.issn1063-777X
dc.identifier.urihttps://dx.doi.org/10.1063/1.3416681
dc.identifier.urihttps://hdl.handle.net/20.500.12513/2392
dc.descriptionWOS: 000277558400008en_US
dc.description.abstractLow temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metal-insulator transition. The weak localization effect and a two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T(-1.63), suggesting that electron-electron interactions are dominant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3416681]en_US
dc.description.sponsorshipState Planning Organization of TurkeyTurkiye Cumhuriyeti Kalkinma Bakanligi [2001K120590]en_US
dc.description.sponsorshipWe would like to thank Dr. Mateo Bosi for providing the InGaN sample. This work is supported by the State Planning Organization of Turkey under Grant No. 2001K120590.en_US
dc.language.isoengen_US
dc.publisherAMER INST PHYSICSen_US
dc.relation.isversionof10.1063/1.3416681en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe temperature dependence of the inelastic scattering time in InGaN grown by MOVPEen_US
dc.typearticleen_US
dc.relation.journalLOW TEMPERATURE PHYSICSen_US
dc.contributor.departmentKırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume36en_US
dc.identifier.issue4en_US
dc.identifier.startpage320en_US
dc.identifier.endpage324en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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