Gelişmiş Arama

Basit öğe kaydını göster

dc.contributor.authorYildiz, A.
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorKasap, M.
dc.contributor.authorMardare, D.
dc.date.accessioned2019-11-24T20:37:54Z
dc.date.available2019-11-24T20:37:54Z
dc.date.issued2008
dc.identifier.issn0022-3093
dc.identifier.urihttps://dx.doi.org/10.1016/j.jnoncrysol.2008.07.009
dc.identifier.urihttps://hdl.handle.net/20.500.12513/2438
dc.descriptionWOS: 000261271100006en_US
dc.description.abstractThe electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the electrical conductivity of titanium dioxide films exhibits a crossover from T(-1/4) to T(-1/2) dependence in the temperature range between 80 and 110 K. Characteristic parameters describing conductivity, such as the characteristic temperature (T(0)). hopping distance (R(hop)), average hopping energy (Delta(hop)), Coulomb gap (Delta(C)), localization length (xi) and density of states (N(E(F))), were determined, and their values were discussed within the models describing conductivity in TiO(2) thin films. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipRomanian Ministry of Education and Research [A 17/2008]; Romanian Academy [GAR 34/2008]; TUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK); ANCSTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [TBAG-U/220 (107T584)]en_US
dc.description.sponsorshipWe would like to thank Professor F. Levy from the Institute of Applied Physics, Polytechnic Federal School of Lausanne, Switzerland, for providing the necessary laboratory facilities to carry out a part of this investigation. This work was partially supported by Romanian Ministry of Education and Research through Grant A 17/2008 and also by Romanian Academy through GAR 34/2008. The authors would also like to thank C. Baban, R. Gavrila, M. Modreanu, and G.I. Rusu. This work was also supported by TUBITAK and ANCS under Project No. TBAG-U/220 (107T584).en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.jnoncrysol.2008.07.009en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectConductivityen_US
dc.subjectVariable-range hopping (VRH)en_US
dc.subjectTiO(2)en_US
dc.titleElectrical properties of TiO(2) thin filmsen_US
dc.typearticleen_US
dc.relation.journalJOURNAL OF NON-CRYSTALLINE SOLIDSen_US
dc.contributor.departmentKırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume354en_US
dc.identifier.issue45-46en_US
dc.identifier.startpage4944en_US
dc.identifier.endpage4947en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster