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dc.contributor.authorYildiz, A.
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorAcar, S.
dc.contributor.authorKasap, M.
dc.contributor.authorBosi, M.
dc.date.accessioned2019-11-24T20:37:59Z
dc.date.available2019-11-24T20:37:59Z
dc.date.issued2007
dc.identifier.issn0256-307X
dc.identifier.urihttps://dx.doi.org/10.1088/0256-307X/24/10/060
dc.identifier.urihttps://hdl.handle.net/20.500.12513/2452
dc.descriptionWOS: 000249810900060en_US
dc.description.abstractResistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). Within the experimental error, the electron concentration in InxGa1-xN alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, 1nxGai_x1V (0.06 <= x <= 0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron-electron interactions and weak localization effects.en_US
dc.language.isoengen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.isversionof10.1088/0256-307X/24/10/060en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleElectron transport in Ga-rich InxGa1-xN alloysen_US
dc.typearticleen_US
dc.relation.journalCHINESE PHYSICS LETTERSen_US
dc.contributor.departmentKırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume24en_US
dc.identifier.issue10en_US
dc.identifier.startpage2930en_US
dc.identifier.endpage2933en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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