| dc.contributor.author | Yildiz, A. | |
| dc.contributor.author | Lisesivdin, S. B. | |
| dc.contributor.author | Acar, S. | |
| dc.contributor.author | Kasap, M. | |
| dc.contributor.author | Bosi, M. | |
| dc.date.accessioned | 2019-11-24T20:37:59Z | |
| dc.date.available | 2019-11-24T20:37:59Z | |
| dc.date.issued | 2007 | |
| dc.identifier.issn | 0256-307X | |
| dc.identifier.uri | https://dx.doi.org/10.1088/0256-307X/24/10/060 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12513/2452 | |
| dc.description | WOS: 000249810900060 | en_US |
| dc.description.abstract | Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). Within the experimental error, the electron concentration in InxGa1-xN alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, 1nxGai_x1V (0.06 <= x <= 0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron-electron interactions and weak localization effects. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | IOP PUBLISHING LTD | en_US |
| dc.relation.isversionof | 10.1088/0256-307X/24/10/060 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Electron transport in Ga-rich InxGa1-xN alloys | en_US |
| dc.type | article | en_US |
| dc.relation.journal | CHINESE PHYSICS LETTERS | en_US |
| dc.contributor.department | Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü | en_US |
| dc.identifier.volume | 24 | en_US |
| dc.identifier.issue | 10 | en_US |
| dc.identifier.startpage | 2930 | en_US |
| dc.identifier.endpage | 2933 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
