| dc.contributor.author | Acar, S. | |
| dc.contributor.author | Yildiz, A. | |
| dc.contributor.author | Kasap, M. | |
| dc.contributor.author | Bosi, M. | |
| dc.date.accessioned | 2019-11-24T20:37:59Z | |
| dc.date.available | 2019-11-24T20:37:59Z | |
| dc.date.issued | 2007 | |
| dc.identifier.issn | 0256-307X | |
| dc.identifier.uri | https://dx.doi.org/10.1088/0256-307X/24/8/059 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12513/2453 | |
| dc.description | WOS: 000248657500059 | en_US |
| dc.description.abstract | Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350 K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5P/GaAs alloy, such as donor density N-D, acceptor density N-A and donor activation energy epsilon(D), were also determined. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | IOP PUBLISHING LTD | en_US |
| dc.relation.isversionof | 10.1088/0256-307X/24/8/059 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE | en_US |
| dc.type | article | en_US |
| dc.relation.journal | CHINESE PHYSICS LETTERS | en_US |
| dc.contributor.department | Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü | en_US |
| dc.identifier.volume | 24 | en_US |
| dc.identifier.issue | 8 | en_US |
| dc.identifier.startpage | 2373 | en_US |
| dc.identifier.endpage | 2375 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
