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dc.contributor.authorYildiz, A.
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorKasap, M.
dc.contributor.authorMardare, D.
dc.date.accessioned2019-11-24T20:38:00Z
dc.date.available2019-11-24T20:38:00Z
dc.date.issued2007
dc.identifier.issn1842-6573
dc.identifier.urihttps://hdl.handle.net/20.500.12513/2456
dc.descriptionWOS: 000253725400011en_US
dc.description.abstractElectrical conductivity measurements in an undoped titanium dioxide thin film have been carried out as a function of temperature (180-320 K). The film has been deposited onto glass substrates by a d.c. magnetron-sputtering method, using water vapors as reactive gas. Analysis of the data showed that temperature dependence on the electrical conductivity was well described by the Mott type variable range hopping (VRH) law, suggesting that the density of states at the Fermi level is constant in this temperature range.en_US
dc.language.isoengen_US
dc.publisherNATL INST OPTOELECTRONICSen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjecttitanium dioxide thin filmen_US
dc.subjectconductivityen_US
dc.subjectvariable range hoppingen_US
dc.titleHigh temperature variable-range hopping conductivity in undoped TiO2 thin filmen_US
dc.typearticleen_US
dc.relation.journalOPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONSen_US
dc.contributor.departmentKırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume1en_US
dc.identifier.issue10en_US
dc.identifier.startpage531en_US
dc.identifier.endpage533en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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