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dc.contributor.authorAydın, R.
dc.contributor.authorAkkaya, A.
dc.contributor.authorŞahin, B.
dc.date.accessioned2023-02-17T11:37:13Z
dc.date.available2023-02-17T11:37:13Z
dc.date.issued2022en_US
dc.identifier.citationAydın, R., Akkaya, A., & Şahin, B. (2022). Light-weight and flexible Ni-doped CuO (Ni: CuO) thin films grown using the cost-effective SILAR method for future technological requests. Journal of Materials Science: Materials in Electronics, 33(30), 23806-23820.en_US
dc.identifier.issn09574522
dc.identifier.urihttps://doi.org/10.1007/s10854-022-09139-z
dc.identifier.urihttps://hdl.handle.net/20.500.12513/4924
dc.description.abstractProducts based on nanostructured flexible thin films, which are anticipated to make their way into our lifetimes in the near future. Therefore, nanostructured metal-oxide thin-film materials grown on flexible substrates are anticipated to meet emerging technological requests. In this article, we present a promising light-weight and flexible thin-film material using un-doped and Ni-doped CuO samples. Ni:CuO flexible thin-film materials were fabricated by using the cost-effective SILAR method on cellulose acetate substrates and the effects of both Ni doping and bending on the change in electrical and optoelectronic performances were investigated. It is observed that Ni doping has a great impact on the main physical properties of flexible CuO samples. The optical bandgap value of the un-doped CuO film improves with increasing Ni ratio in the growth bath. Also, sheet resistance values of the un-doped and Ni:CuO samples are a little affected due to bending of samples for bending radius ~ 20 mm. These flexible all solution-processed nanostructured CuO samples are promising candidates for use in future optoelectronic applications.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.isversionof10.1007/s10854-022-09139-zen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleLight-weight and flexible Ni-doped CuO (Ni:CuO) thin films grown using the cost-effective SILAR method for future technological requestsen_US
dc.typearticleen_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentMucur Meslek Yüksekokuluen_US
dc.contributor.authorIDAbdullah Akkaya / 0000-0002-4086-6365en_US
dc.identifier.volume33en_US
dc.identifier.issue30en_US
dc.identifier.startpage23806en_US
dc.identifier.endpage23820en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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