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dc.contributor.authorDokme, Ilbilge
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2019-11-24T20:35:42Z
dc.date.available2019-11-24T20:35:42Z
dc.date.issued2006
dc.identifier.issn0268-1242
dc.identifier.urihttps://dx.doi.org/10.1088/0268-1242/21/8/012
dc.identifier.urihttps://hdl.handle.net/20.500.12513/1948
dc.descriptionWOS: 000240123100013en_US
dc.description.abstractIn this study, we have investigated the intersection behaviour of forward and reverse bias current-voltage (I-V) characteristics of Al/SiO2/p-Si Schottky diodes in the temperature range of 79-325 K. The crossing of the experimental semi-logarithmic ln(I)-V curves appears as an abnormality when seen with respect to the conventional behaviour of ideal Schottky diodes. Experimental results show that this crossing of ln(I)-V curves is an inherent property of even Schottky diodes. The ideality factor n was found to decrease, while the zero-bias Schottky barrier height (SBH) Phi(B0) increases with increasing temperature. The conventional Richardson plot is found to be nonlinear in the temperature range measured. However, the ln(I-0/T-2) versus 1000/nT plot gives a straight line corresponding to activation energy 0.233 eV. It is shown that the values of series resistance R-S estimated from Cheung's method were strongly temperature dependent and abnormally increased with increasing temperature. In addition, the temperature dependence of energy distribution of interface states density N-SS profiles was obtained from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height Phi(e) and ideality factor n. All these behaviours indicate that the thermionic emission (TE) cannot be the main current transport mechanism, especially at low temperatures.en_US
dc.language.isoengen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.isversionof10.1088/0268-1242/21/8/012en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleOn the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperaturesen_US
dc.typearticleen_US
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.contributor.departmentKırşehir Ahi Evran Üniversitesi, Eğitim Fakültesi, Matematik ve Fen Bilimleri Eğitimi Bölümüen_US
dc.identifier.volume21en_US
dc.identifier.issue8en_US
dc.identifier.startpage1053en_US
dc.identifier.endpage1058en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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