Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE

Abstract

Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350 K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5P/GaAs alloy, such as donor density N-D, acceptor density N-A and donor activation energy epsilon(D), were also determined.