Analysis of Barrier İnhomogeneity in Sic Schottky Diodes with P3HT: PCBM İnterfaces Over A Wide Temperature Range

Abstract

Research on the metal–semiconductor interface continues due to its significant impact on the electrical characteristics of Schottky diodes. In this study, a Schottky diode with the structure Au/P3HT: PCBM/6H–SiC/Al was fabricated, and its current–voltage characteristics were analyzed over a wide temperature range of 80–375 K. Using these characteristics, the ideality factor (n), barrier height (Φb), resistance (Rs), and saturation current (Io) parameters of the diode were calculated with the help of the Thermionic emission model, Cheung-Cheung, and Norde functions. The correlation between these parameters was also examined. The Richardson constant (A*) was determined using the Richardson plot. Furthermore, the barrier inhomogeneity was analyzed based on a Gaussian distribution model. Although the barrier height has an inhomogeneity showing a double Gaussian distribution that varies with temperature, the effect of voltage deformation was determined to be stable at all temperatures.