Electrical conduction properties of In-doped ZnO thin films

Abstract

The electrical conduction mechanism of undoped and In-doped ZnO thin films is investigated. The behavior of conductivity is consistent with the variable-range hopping conduction mechanism. From the experimental data, the values of the density of states at the Fermi level, the hopping distance and the average hopping energy are obtained. The effect of these parameters on In doping level is discussed. It was found that the value of the density of states at the Fermi level increases with increasing In doping level, which is the reason for the rise in conductivity of the films.