A simulation model for dielectric relaxation based on defect diffusion model and waiting time problems

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ELSEVIER SCIENCE BV

Erişim Hakkı

info:eu-repo/semantics/openAccess

Özet

We propose a simulation model for dielectric relaxation based on defect diffusion. The defect diffusion model (DDM) has been used to interpret dielectric relaxation and other relaxation phenomena. The essential feature of the model is a cooperative interaction between the relaxing dipole and its nearest-neighbors, containing defects, and the relaxation can only occur when a defect encounters a dipole. In our model we have taken the motion of defect as a stochastic process characterized by successive waiting time problem rather than classical random walk motion. We present computer simulation result for a simple dipolar model system and the dipole correlation function obtained from this new model under various physical conditions appears to be in the form of a stretched exponential function. (c) 2010 Elsevier B.V. All rights reserved.

Açıklama

5th International Conference on Dielectric Spectroscopy and Its Applications -- AUG 26-29, 2008 -- Lyon, FRANCE
WOS: 000276665500006

Anahtar Kelimeler

Diffusion and transport, Modeling and simulation, Monte Carlo simulations, Structure, Defects

Kaynak

JOURNAL OF NON-CRYSTALLINE SOLIDS

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Cilt

356

Sayı

Kas.17

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Onay

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